600V & 1200V Trenchstop™ Performance Series IGBTs

Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs (Insulated-Gate Bipolar Transistors) combine Trench top-cell and field stop concept leads to significantly improved static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.

Mga Resulta: 3
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Package / Case
Isitilo ng Mounting
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum na Gate Emitter Voltage
Tuloy-tuloy na Collector Current sa 25 C
Pd - Power Dissipation
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,200Inoorder
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 53 A 200 W - 40 C + 175 C Trenchstop Performance Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
480Inaasahan 8/20/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 319.2 W - 40 C + 175 C Trenchstop IGBT3 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Lead-Time 26 (na) Linggo
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 67 A 246 W - 40 C + 175 C Trenchstop Performance Tube