60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.

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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Kuwalipikasyon
Packaging
Panjit MOSFETs 60V P-Channel Enhancement Mode MOSFET
Datasheet
Lead-Time para sa Hindi Naka-stock 52 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

Si 60 V 11.5 A 110 mOhms - 20 V, 20 V 2.5 V 10 nC AEC-Q101 Reel
Panjit MOSFETs 60V P-Channel Enhancement Mode MOSFET
Datasheet
Lead-Time para sa Hindi Naka-stock 52 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

Si 60 V 15 A 68 mOhms - 20 V, 20 V 2.5 V 17 nC AEC-Q101 Reel