NCV51561BBDWR2G

onsemi
863-NCV51561BBDWR2G
NCV51561BBDWR2G

Mfr.:

Paglalarawan:
Galvanically Isolated Gate Drivers 5 kVrms Isolated Dual Channel 4.5/9 A Automotive Gate Driver Automotive

ECAD Model:
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May Stock: 982

Stock:
982 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
28 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱232.00 ₱232.00
₱175.74 ₱1,757.40
₱161.24 ₱4,031.00
₱145.58 ₱14,558.00
₱133.98 ₱33,495.00
₱132.24 ₱66,120.00
Buo Reel (Mag-order sa multiple ng 1000)
₱123.54 ₱123,540.00
₱120.06 ₱240,120.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga Galvanically Isolated Gate Driver
RoHS:  
NCV51561
SMD/SMT
SOIC-16
- 40 C
+ 125 C
58 ns
Reel
Cut Tape
Brand: onsemi
Dami ng Driver: 2 Driver
Dami ng Output: 2 Output
Produkto: MOSFET Gate Drivers
Uri ng Produkto: Galvanically Isolated Gate Drivers
Dami ng Pack ng Pabrika: 1000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 5 V
Supply Voltage - Min: 3 V
Teknolohiya: SiC
Uri: High-Side, Low-Side
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Mga Piniling Attribute: 0

USHTS:
8542390090
ECCN:
EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCV51561 Isolated Dual Channel Gate Driver

onsemi NCV51561 Isolated Dual-Channel Gate Driver features a 4.5A source and 9A sink peak current with short and matched propagation delays. The NCV51561 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches.