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TP65H050G4YS

Name: Renesas Electronics TP65H050G4YS
Brand: Renesas Electronics
SKU: 227-TP65H050G4YS
Price: 566.66 PHP
Availability: InStock

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Mouser #:

227-TP65H050G4YS

Mfr. #:

TP65H050G4YS

Mfr.:

Renesas Electronics

Paglalarawan:

GaN FETs 650V, 50mohm GaN FET in TO247-4L

Datasheet:

TP65H050G4YS Datasheet

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May Stock: 601

Stock:: 601 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

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Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱566.66	₱566.66
	₱389.76	₱3,897.60
	₱259.26	₱25,926.00
	₱258.68	₱310,416.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Renesas Electronics
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	16 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SuperGaN
Brand:	Renesas Electronics
Kumpigurasyon:	Cascode
Tagal ng Pagbagsak:	8 ns
Packaging:	Tube
Uri ng Produkto:	GaN FETs
Tagal ng Pagtaas:	5 ns
Series:	Gen IV SuperGaN
Dami ng Pack ng Pabrika:	1200
Subcategory:	Transistors
Teknolohiya:	GaN
Uri ng Transistor:	GaN HEMT
Karaniwang Tagal ng Delay ng Pag-off:	40 ns
Karaniwang Tagal ng Delay ng Pag-on:	40 ns

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Datasheet

TP65H050G4YS Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TP65H050G4YS 650V SuperGaN® FET

Renesas Electronics TP65H050G4YS 650V SuperGaN^® FET is a 50mΩ Gallium Nitride (GaN) normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.