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NXH008T120M3F2PTHG

Name: onsemi NXH008T120M3F2PTHG
Brand: onsemi
SKU: 863-H008T120M3F2PTHG
Price: 9882.04 PHP
Availability: InStock

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Mouser #:

863-H008T120M3F2PTHG

Mfr. #:

NXH008T120M3F2PTHG

Mfr.:

onsemi

Paglalarawan:

MOSFET Modules 8M 1200V 40A M3S SIC TNPC MODULE

Datasheet:

NXH008T120M3F2PTHG Datasheet

ECAD Model:

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May Stock: 28

Stock:: 28 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱9,882.04	₱9,882.04
	₱9,191.26	₱91,912.60
100	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET Module
RoHS:
Teknolohiya:	SiC
Isitilo ng Mounting:	Press Fit
Package / Case:	PIM-29
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	129 A
Rds On - Drain-Source Resistance:	8.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	371 W
Series:	NXH008T120M3F2PTHG
Packaging:	Tray
Brand:	onsemi
Tagal ng Pagbagsak:	15 ns
Uri ng Produkto:	MOSFET Modules
Tagal ng Pagtaas:	20.6 ns
Dami ng Pack ng Pabrika:	20
Subcategory:	Discrete and Power Modules
Pangalang pangkalakal:	EliteSiC
Karaniwang Tagal ng Delay ng Pag-off:	137 ns
Karaniwang Tagal ng Delay ng Pag-on:	41.5 ns
Vf - Forward Voltage:	4.8 V

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Datasheet

NXH008T120M3F2PTHG Datasheet

CNHTS:: 8504409100
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NXH008T120M3F2PTHG Silicone Carbide (SiC) Module

onsemi NXH008T120M3F2PTHG Silicone Carbide (SiC) Module is a T-type neutral point clamped converter (TNPC) module based on 1200V M3S Planer SiC MOSFETs. NXH008T120M3F2PTHG is optimized for fast-switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This module exhibits optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.