NDSH20120CDN

onsemi
863-NDSH20120CDN
NDSH20120CDN

Mfr.:

Paglalarawan:
SiC Schottky Diodes SIC DIODE GEN20 1200V TO247-3L

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 400

Stock:
400 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
13 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱556.80 ₱556.80
₱334.66 ₱3,346.60
₱334.08 ₱33,408.00
₱300.44 ₱135,198.00
₱291.74 ₱262,566.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Dual Anode Common Cathode
24 A
1.2 kV
1.75 V
59 A
1 uA
- 55 C
+ 175 C
NDSH20120CDN
Tube
Brand: onsemi
Pd - Power Dissipation: 94 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 450
Subcategory: Diodes & Rectifiers
Pangalang pangkalakal: EliteSiC
Vr - Reverse Voltage: 1.2 kV
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Mga Piniling Attribute: 0

CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.