QPA2935 2W S-Band GaN Driver Amplifier

Qorvo QPA2935 2W S-Band GaN Driver Amplifier operates from 2.7GHz to 3.5GHz and delivers 33dBm of saturated output power and 18dB of large-signal gain while achieving greater than 52% power-added efficiency. The QPA2935 is fabricated on the QGaN25 0.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is matched to 50Ω with integrated DC blocking caps on both I/O ports.

Mga Resulta: 2
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Frequency ng Pagpapatakbo Supply Voltage ng Pagpapatakbo Supply Current ng Pagpapatakbo Gain Uri Isitilo ng Mounting Teknolohiya Minimum na Operating Temperature Maximum na Operating Temperature Series Packaging
Qorvo RF Amplifier 2.9-3.5 GHz, 2W S-band MMIC, OVM 72May Stock
Min.: 1
Mult.: 1

2.7 GHz to 3.5 GHz 25 V 29 mA 28.4 dB Driver Amplifiers SMD/SMT GaN SiC - 40 C + 85 C QPA2935 Bag
Qorvo RF Amplifier 2.9-3.5 GHz, 2W S-band MMIC, OVM Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 250
Mult.: 250
Reel: 250

2.7 GHz to 3.5 GHz 25 V 29 mA 28.4 dB Driver Amplifiers SMD/SMT GaN SiC - 40 C + 85 C QPA2935 Reel