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SGT350R70GTK

Name: STMicroelectronics SGT350R70GTK
Brand: STMicroelectronics
SKU: 511-SGT350R70GTK
Price: 166.6 PHP
Availability: InStock

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Mouser #:

511-SGT350R70GTK

Mfr. #:

SGT350R70GTK

Mfr.:

STMicroelectronics

Paglalarawan:

GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor

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Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

SGT350R70GTK Datasheet (PDF)

ECAD Model:

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May Stock: 719

Stock:: 719 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 18 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱166.60	₱166.60
	₱107.70	₱1,077.00
	₱73.78	₱7,378.00
	₱59.26	₱29,630.00
	₱55.39	₱55,390.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱49.50	₱123,750.00
	₱45.22	₱226,100.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	DPAK-3
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	350 mOhms
Vgs - Gate-Source Voltage:	- 1.4 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	1.5 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	47 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	CN
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Tagal ng Pagbagsak:	6.1 ns
Maselan sa Moisture:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Produkto:	FET
Uri ng Produkto:	GaN FETs
Tagal ng Pagtaas:	3.5 ns
Series:	SGT
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Teknolohiya:	GaN
Uri:	PowerGaN Transistor
Karaniwang Tagal ng Delay ng Pag-off:	1.2 ns
Karaniwang Tagal ng Delay ng Pag-on:	0.9 ns
Timbang ng Unit:	300 mg

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Mga Piniling Attribute: 0

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Datasheet

SGT350R70GTK Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT350R70GTK E-Mode PowerGaN Transistor

STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor is a high-performance enhancement-mode PowerGaN transistor optimized for efficient power conversion in demanding applications. With a drain-source voltage rating of 700V and a maximum on-resistance of 350mΩ, the STMicroelectronics SGT350R70GTK delivers low conduction losses and fast switching capabilities thanks to Gallium Nitride (GaN) technology. Packaged in a thermally enhanced DPAK format, the device supports high current handling and improved heat dissipation, suitable for high-density power designs. A low gate charge and output capacitance enable high-frequency operation, ideal for use in power factor correction (PFC), resonant converters, and other advanced power topologies in industrial, telecom, and consumer electronics sectors.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.