DI006H03SQ

Diotec Semiconductor
637-DI006H03SQ
DI006H03SQ

Mfr.:

Paglalarawan:
MOSFETs MOSFET, SO-8, 30V, 6A, 150C, N+P

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 3,949

Stock:
3,949 Maaaring Ipadala Agad
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱136.88 ₱136.88
₱92.22 ₱922.20
₱62.64 ₱6,264.00
₱52.43 ₱26,215.00
Buo Reel (Mag-order sa multiple ng 4000)
₱43.15 ₱172,600.00
₱41.82 ₱334,560.00
24,000 Quote

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Diotec Semiconductor
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
SMD/SMT
SO-8
N-Channel, P-Channel
4 Channel
30 V
6 A, 4.2 A
25 mOhms, 50 mOhms
- 20 V, 20 V
1 V, 2 V
11.7 nC, 11.4 nC
- 55 C
+ 150 C
1.5 W
Enhancement
Reel
Cut Tape
Brand: Diotec Semiconductor
Kumpigurasyon: Quad
Tagal ng Pagbagsak: 8.7 ns, 13.5 ns
Forward Transconductance - Min: 4 S, 3.5 S
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 15 ns, 4.9 ns
Series: DI0XX
Dami ng Pack ng Pabrika: 4000
Subcategory: Transistors
Karaniwang Tagal ng Delay ng Pag-off: 17.5 ns, 28.2 ns
Karaniwang Tagal ng Delay ng Pag-on: 11.2 ns, 7.5 ns
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.