AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

Mga Resulta: 4
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Package / Case
Isitilo ng Mounting
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum na Gate Emitter Voltage
Tuloy-tuloy na Collector Current sa 25 C
Pd - Power Dissipation
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 4L
Datasheet
444May Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 4L
Datasheet
445May Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 50 A 416 W - 55 C + 175 C AFGH4L25T120RWD Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT STAND-ALONE TO247 3L
Datasheet
418May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RW Tube
onsemi IGBTs FS7 1200V 25A SCR IGBT TO247 3L
Datasheet
278May Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.38 V 20 V 50 A 468 W - 55 C + 175 C AFGHL25T120RWD Tube