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STD65N160M9

Name: STMicroelectronics STD65N160M9
Brand: STMicroelectronics
SKU: 511-STD65N160M9
Price: 196.62 PHP
Availability: InStock

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Mouser #:

511-STD65N160M9

Mfr. #:

STD65N160M9

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET

Kumpletuhin ang Iyong Disenyo

Datasheet:

STD65N160M9 Datasheet (PDF)

ECAD Model:

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May Stock: 775

Stock:: 775 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱196.62	₱196.62
	₱138.62	₱1,386.20
	₱97.44	₱9,744.00
	₱85.26	₱42,630.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱69.02	₱172,550.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	DPAK-3 (TO-252-3)
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	160 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	32 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	106 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Tagal ng Pagbagsak:	7 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	4 ns
Series:	MDmesh M9
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Timbang ng Unit:	330 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

STD65N160M9 Datasheet (PDF)

Other

Super-junction Power MOSFETs for best efficiency (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STD65N160M9 N-channel Power MOSFET

STMicroelectronics STD65N160M9 N-channel Power MOSFET is based on super-junction MDmesh M9 technology. The MOSFET is suitable for medium/high voltage featuring very low R_DS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing for an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it particularly suitable for applications that require superior power density and outstanding efficiency.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.