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NVBG020N120SC1

Name: onsemi NVBG020N120SC1
Brand: onsemi
SKU: 863-NVBG020N120SC1
Price: 2832.14 PHP
Availability: InStock

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Mouser #:

863-NVBG020N120SC1

Mfr. #:

NVBG020N120SC1

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1

Datasheet:

NVBG020N120SC1 Datasheet

ECAD Model:

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May Stock: 234

Stock:: 234 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 234 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 800)

Cut Tape

MouseReel™ (+₱350.00)

LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱2,832.14	₱2,832.14
	₱2,457.46	₱24,574.60
	₱2,287.52	₱228,752.00
	₱2,286.94	₱1,143,470.00
Buo Reel (Mag-order sa multiple ng 800)
	₱2,008.54	₱1,606,832.00
24,800	Quote

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
REACH - SVHC:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	98 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	220 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	468 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9 ns
Forward Transconductance - Min:	34 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	20 ns
Series:	NVBG020N120SC1
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	42 ns
Karaniwang Tagal ng Delay ng Pag-on:	22 ns
Timbang ng Unit:	4.675 g

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Mga Piniling Attribute: 0

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Datasheet

NVBG020N120SC1 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

NVBG020N120SC1 N-Channel Silicon Carbide MOSFETs

onsemi NVBG020N120SC1 N-Ch Silicon Carbide MOSFETs use a technology that provides superior switching performance and higher reliability. The NVBG020N120SC1 MOSFETs implement higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi device's low ON resistance and compact chip size ensure low capacitance and gate charge. The NVBG020N120SC1 N-Ch Silicon Carbide MOSFETs are qualified for automotive use according to AEC-Q101, making them ideal for automotive applications.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.