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RD3S100AAFRATL

Name: ROHM Semiconductor RD3S100AAFRATL
Brand: ROHM Semiconductor
SKU: 755-RD3S100AAFRATL
Price: 227.89 PHP
Availability: InStock

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Mouser #:

755-RD3S100AAFRATL

Mfr. #:

RD3S100AAFRATL

Mfr.:

ROHM Semiconductor

Paglalarawan:

MOSFETs Transistor, MOSFET Nch, 190V(Vdss), 10.0A(Id), (10V Drive)

Datasheet:

RD3S100AAFRATL Datasheet

ECAD Model:

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May Stock: 2,509

Stock:: 2,509 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱227.89	₱227.89
	₱142.80	₱1,428.00
	₱106.51	₱10,651.00
	₱90.44	₱45,220.00
	₱87.47	₱87,470.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱82.11	₱205,275.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	ROHM Semiconductor
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TO-252-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	190 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	182 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	52 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	85 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	75 ns
Forward Transconductance - Min:	6 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	20 ns
Series:	RD3
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	140 ns
Karaniwang Tagal ng Delay ng Pag-on:	15 ns
Mga Alias ng # ng Piyesa :	RD3S100AAFRA
Timbang ng Unit:	330 mg

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Mga Piniling Attribute: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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Datasheet

RD3S100AAFRATL Datasheet

Specification Sheets

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Mga Kodigo sa Pagsunod

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Mga Klasipikasyon ng Pinagmulan

Bansang Pinagmulan:: Thailand
Bansang Pinagmulan ng Pag-assemble:: Hindi available
Bansa ng Diffusion:: Hindi available

Ang bansa ay maaaring magbago sa oras ng pagpapadala.

AEC-Q101 Automotive MOSFETs

ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V_DSS to 100V_DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R_DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Mga Pansasakyang Device

Ang mga Pansasakyang Device ng ROHM ay nag-aambag sa ebolusyon ng sektor ng sasakyan at susunod na henerasyong mga sasakyan sa pamamagitan ng pangmatagalan at matatag na supply ng mga produkto nito. Ang malawak na linya ng mga device ng ROHM ay sumusuporta sa pagbabago patungo sa higit na computerization at konektibidad. Tumututok ang ROHM sa kaligtasan, ginhawa at ekolohiya habang naglalaan ng mga optimum na solusyon sa mga pangangailangan ng mga customer.

RD3S100AAFRA N-Ch 190V 10A Power MOSFET

ROHM Semiconductor RD3S100AAFRA N-Ch 190V 10A Power MOSFET features a low on-resistance and fast switching speed. The RD3S100AAFRA MOSFET is can easily be set up for parallel use. The ROHM RD3S100AAFRA Power MOSFET is designed for switching power supply applications.

RD3x Automotive N-Channel Power MOSFETs

ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs are high-performance switching and rectifier devices designed for use in a wide range of power and signal applications. The AEC-Q101-qualified ROHM RD3x components feature low forward voltage, fast recovery time, and high surge current capability, making the MOSFETs ideal for efficient power conversion and protection in compact electronic systems. With options tailored for automotive, industrial, and consumer electronics, the RD3 family supports applications such as DC-DC converters, motor drivers, LED lighting, and battery-powered devices. A compact surface-mount (TO-252-3) package and low leakage current contribute to space-saving and energy-efficient designs, while high reliability ensures stable performance under demanding conditions.