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TP65H070G4PS

Name: Renesas Electronics TP65H070G4PS
Brand: Renesas Electronics
SKU: 227-TP65H070G4PS
Price: 435.58 PHP
Availability: InStock

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Mouser #:

227-TP65H070G4PS

Mfr. #:

TP65H070G4PS

Mfr.:

Renesas Electronics

Paglalarawan:

GaN FETs 650V, 70mohm GaN FET in TO220

Datasheet:

TP65H070G4PS Datasheet (PDF)

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May Stock: 1,216

Stock:: 1,216 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱435.58	₱435.58
	₱234.90	₱2,349.00
	₱215.76	₱21,576.00
	₱182.70	₱91,350.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱182.70	₱182,700.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Renesas Electronics
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	9 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SuperGaN
Brand:	Renesas Electronics
Tagal ng Pagbagsak:	7.2 ns
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	GaN FETs
Tagal ng Pagtaas:	6.2 ns
Series:	Gen IV SuperGaN
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Teknolohiya:	GaN
Karaniwang Tagal ng Delay ng Pag-off:	56 ns
Karaniwang Tagal ng Delay ng Pag-on:	43.4 ns

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Datasheet

TP65H070G4PS Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H070G4PS 650V SuperGaN® GaN FET

Renesas Electronics TP65H070G4PS 650V SuperGaN^® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. The TP65H070G4PS combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a three-lead TO-220 package. Operating within a -55°C to +150°C temperature range, this component features 26W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and 120A pulsed drain current (maximum). The Gen IV SuperGaN platform from Renesas Electronics uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.