StrongIRFET™ 2 Power MOSFETs

Infineon Technologies StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, and 100% avalanche tested MOSFETs. The Infineon StrongIRFET 2 MOSFETs are optimized for a wide range of applications. The MOSFETs offer a VDS range of 80V to 100V and an RDS(on) from 2.4mΩ to 8.2mΩ.

Mga Resulta: 74
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal Packaging
Infineon Technologies MOSFETs IFX FET > 60-80V 4,246May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 282 A 1.4 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IR FET UP TO 60V 2,799May Stock
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 30 V 128 A 1.8 mOhms - 20 V, 20 V 2.35 V 95 nC - 55 C + 175 C 167 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFETs IFX FET > 60-80V 1,070May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms - 20 V, 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 1,368May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms - 20 V, 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 1,417May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms - 20 V, 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET > 60-80V 3,987May Stock
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms - 20 V, 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube

Infineon Technologies MOSFETs 40V StrongIRFET 195A, 1.2mOhm,300nC 2,949May Stock
1,600Inaasahan 11/12/2026
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 426 A 1.2 mOhms - 20 V, 20 V 3.9 V 300 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 40V 120A 2.5mOhm 90nC StrongIRFET 3,008May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 208 A 2.5 mOhms - 20 V, 20 V 3.9 V 135 nC - 55 C + 175 C 208 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 19May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 2.4 mOhms - 20 V, 20 V 2.2 V 89 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 489May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 107 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 961May Stock
1,000Inaasahan 11/19/2026
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 119 A 3.05 mOhms - 20 V, 20 V 3.3 V 68 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 921May Stock
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 52 A 12.9 mOhms - 20 V, 20 V 3.8 V 19 nC - 55 C + 175 C 71 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 544May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 46 A 8.2 mOhms - 20 V, 20 V 3.8 V 42 nC - 55 C + 175 C 35 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET 60V 53May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 187 A 1.8 mOhms - 20 V, 20 V 2.1 V 108 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 124May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 166 A 1.95 mOhms - 20 V, 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 415May Stock
Min.: 1
Mult.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 259 A 1.7 mOhms - 20 V, 20 V 2.2 V 124 nC - 55 C + 175 C 250 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 579May Stock
1,000Inaasahan 1/7/2027
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 182 A 2.4 mOhms - 20 V, 20 V 3.8 V 89 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs 40V 118A 3.3 mOhm HEXFET 62nC 99W 953May Stock
1,000Inaasahan 8/18/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 123 A 3.3 mOhms - 20 V, 20 V 1.8 V 93 nC - 55 C + 175 C 99 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFETs 40V 120A 2.5 mOhm HEXFET 90nC 143W 1May Stock
3,000Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 120 A 2.5 mOhms - 20 V, 20 V 1.8 V 135 nC - 55 C + 175 C 143 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V
1,997Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 83 A 3 mOhms - 20 V, 20 V 3 V 154 nC - 55 C + 175 C 41 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET > 60-80V
2,000Inaasahan 11/19/2026
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 80 V 196 A 1.6 mOhms - 20 V, 20 V 3.8 V 170 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET 40V
799Inaasahan 8/13/2026
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 191 A 1.45 mOhms - 20 V, 20 V 2.1 V 106 nC - 55 C + 175 C 188 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 80 V 94 A 5.5 mOhms - 20 V, 20 V 2.2 V 36 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 800
Mult.: 800
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 209 A 2.3 mOhms - 20 V, 20 V 2.2 V 89 nC - 55 C + 175 C 214 W Enhancement Reel