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NTMFWS1D5N08XT1G

Name: onsemi NTMFWS1D5N08XT1G
Brand: onsemi
SKU: 863-NTMFWS1D5N08XT1G
Price: 212.86 PHP
Availability: InStock

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Mouser #:

863-NTMFWS1D5N08XT1G

Mfr. #:

NTMFWS1D5N08XT1G

Mfr.:

onsemi

Paglalarawan:

MOSFETs T10S 80V SG NCH MOSFET SO8FL HE WF

Datasheet:

NTMFWS1D5N08XT1G Datasheet

ECAD Model:

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May Stock: 14,471

Stock:: 14,471 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 25 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱212.86	₱212.86
	₱139.20	₱1,392.00
	₱104.98	₱10,498.00
	₱91.06	₱45,530.00
	₱78.30	₱78,300.00
Buo Reel (Mag-order sa multiple ng 1500)
	₱69.60	₱104,400.00
	₱68.44	₱205,320.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	SO8FL-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	253 A
Rds On - Drain-Source Resistance:	1.43 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	83 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	194 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9 ns
Forward Transconductance - Min:	176 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	9 ns
Series:	NTMFWS1D5N08X
Dami ng Pack ng Pabrika:	1500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	43 ns
Karaniwang Tagal ng Delay ng Pag-on:	24 ns

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Mga Piniling Attribute: 0

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Datasheet

NTMFWS1D5N08XT1G Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Teknolohiya ng PowerTrench

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFWS1D5N08X Single N-Channel MOSFET

onsemi NTMFWS1D5N08X Single N-Channel MOSFET incorporates a low Q_RR and soft recovery body diode, reducing switching losses. The NTMFWS1D5N08X device offers low R_DS(on) to minimize conduction losses, ensuring efficient operation. Additionally, its low Q_G and capacitance contribute to minimizing driver losses. onsemi NTMFWS1D5N08X Single N-Channel MOSFET is lead free, halogen free, BFR free, and RoHS compliant.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.