QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Mga Resulta: 41
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-3.5GHz 55 Watt 28V GaN Flangeless Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 100
Mult.: 100

NI-360 N-Channel
Qorvo GaN FETs DC-6.0GHz 10 Watt 28V GaN Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 100
Mult.: 100

Qorvo GaN FETs DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 100
Mult.: 100

Die N-Channel
Qorvo GaN FETs DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
Lead-Time 20 (na) Linggo
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 25
Mult.: 25

Screw Mount NI-360 N-Channel 32 V 7.32 A - 40 C + 85 C 86 W
Qorvo GaN FETs DC-3.5GHz 100W 28V GaN Hindi Naka-stock
Min.: 25
Mult.: 25

NI-360 N-Channel 28 V 12 A - 7 V, + 2 V - 2.9 V 144 W
Qorvo GaN FETs DC-25GHz 7Watt NF 1.3dB GaN Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 5
Mult.: 5

SMD/SMT DIE N-Channel 80 mA - 40 C + 85 C 8.9 W
Qorvo GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 50
Mult.: 50

SMD/SMT Die N-Channel 32 V 1.7 A - 65 C + 150 C 34.5 W
Qorvo GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.3 A + 225 C 33 W
Qorvo GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.8 A + 225 C 49 W
Qorvo GaN FETs 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

SMD/SMT QFN-16 32 V 250 mA - 40 C + 85 C
Qorvo GaN FETs DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB Lead-Time 16 (na) Linggo
Min.: 50
Mult.: 50

Die N-Channel
Qorvo GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
Hindi Naka-stock
Min.: 25
Mult.: 25

SMD/SMT NI-360 N-Channel 32 V 7.32 A - 40 C + 85 C 86 W
Qorvo T1G4020036-FL
Qorvo GaN FETs DC-3.5GHz GaN 2X 120W 36Volt
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Min.: 25
Mult.: 25

NI-650 N-Channel