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NTBG060N065SC1

Name: onsemi NTBG060N065SC1
Brand: onsemi
SKU: 863-NTBG060N065SC1
Price: 665.26 PHP
Availability: InStock

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Mouser #:

863-NTBG060N065SC1

Mfr. #:

NTBG060N065SC1

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS D2PAK-7L 650V

Datasheet:

NTBG060N065SC1 Datasheet

ECAD Model:

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May Stock: 334

Stock:: 334 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 17 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱665.26	₱665.26
	₱461.68	₱4,616.80
	₱390.92	₱39,092.00
	₱365.40	₱182,700.00
Buo Reel (Mag-order sa multiple ng 800)
	₱365.40	₱292,320.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	46 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	74 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	170 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	11 ns
Forward Transconductance - Min:	12 S
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	14 ns
Series:	NTBG060N065SC1
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	24 ns
Karaniwang Tagal ng Delay ng Pag-on:	11 ns

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Mga Piniling Attribute: 0

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Datasheet

NTBG060N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

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onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTBG060N065SC1 44mohm Silicon Carbide MOSFET

onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG060N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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