FS50R12W2T7 & FS75R12W2T7 EasyPACK™ IGBT Modules

Infineon Technologies FS50R12W2T7 and FS75R12W2T7 EasyPACK™ IGBT Modules are 1200V three-phase input rectifier Insulated Gate Bipolar Transistor Modules. Based on TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diode technology, these devices provide strongly reduced losses and are highly controllable. These modules are specially optimized for industrial drive applications, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained with an operation overload temperature up to +175°C in the power module. 

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Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Produkto
Kumpigurasyon
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Tuloy-tuloy na Collector Current sa 25 C
Gate-Emitter Leakage Current
Minimum na Operating Temperature
Maximum na Operating Temperature
Packaging
Infineon Technologies IGBT Modules 1200 V, 50 A sixpack IGBT module
Datasheet
Lead-Time 10 (na) Linggo
Min.: 1
Mult.: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.5 V 50 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 75 A sixpack IGBT module
Datasheet
Lead-Time para sa Hindi Naka-stock 10 (na) Linggo
Min.: 1
Mult.: 1

IGBT Silicon Modules 6-Pack 1.2 kV 1.55 V 65 A 100 nA - 40 C + 175 C Tray