TGF297x GaN RF Transistors

Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz and offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at a high drain bias operation. Qorvo TGF297x GaN RF Transistors are ideal for military radar and commercial radar including avionics, marine, and weather.

Mga Resulta: 3
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Maximum na Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB 305May Stock
700Inoorder
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 326 mA + 225 C 8.4 W
Qorvo GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 50
Mult.: 50

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.3 A + 225 C 33 W
Qorvo GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 25
Mult.: 25

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.8 A + 225 C 49 W