iS20M5R5S1T 200V N-channel SuperQ™ Power MOSFETs

iDEAL Semiconductor iS20M5R5S1T 200V N-channel SuperQ™ power MOSFETs are designed for high‑efficiency switching applications. These MOSFETs feature ultra‑low RDS(on) of 5.5mΩ, enabling reduced conduction losses and improved thermal performance. With the low switching losses (QSW and EOSS) and 112 nC gate charge, these MOSFETs enhance efficiency in both full‑ and partial‑load conditions. The iS20M5R5S1T MOSFETs are fully UIS‑tested and provide high Short‑Circuit Withstand Capability (SCWC) for improved reliability. These power MOSFETs support a high continuous drain current of 151A, making them suitable for demanding power stages like motor control, synchronous rectification, and SMPS designs.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Pangalang pangkalakal
Packaging
iDEAL Semiconductor MOSFETs SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package
Datasheet
Lead-Time para sa Hindi Naka-stock 2 (na) Linggo
Min.: 200
Mult.: 1

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Bulk
iDEAL Semiconductor MOSFETs SuperQ MOSFET 200 V, 5.5m max, normal threshold level in TOLL package
Datasheet
Lead-Time para sa Hindi Naka-stock 10 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT TOLL-8 N-Channel 1 Channel 200 V 151 A 5.5 mOhms 20 V 4.1 V 112 nC - 55 C + 175 C 314 W Enhancement SuperQ Reel