Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
85May Stock
Min.: 1
Mult.: 1
Reel: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
Datasheet
73May Stock
1,200Inaasahan 3/16/2026
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Datasheet
594May Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datasheet
510May Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datasheet
1,597May Stock
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 3,000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datasheet
593May Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
Datasheet
90May Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
Datasheet
600Inaasahan 7/27/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datasheet
1,200Inoorder
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datasheet
400Inoorder
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
Datasheet
996Inaasahan 4/22/2026
Min.: 1
Mult.: 1
Reel: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
1,113Inaasahan 3/10/2026
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Datasheet
844Inaasahan 10/26/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
Datasheet
100Inoorder
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
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Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
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SiC MOSFETS
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Datasheet
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
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SiC MOSFETS
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
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SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 1,000
Mult.: 1,000
Reel: 1,000

SiC MOSFETS