NVHL080N120SC1A

onsemi
863-NVHL080N120SC1A
NVHL080N120SC1A

Mfr.:

Paglalarawan:
SiC MOSFETs SIC MOS TO247-3L 80MOHM 1200V

Datasheet:
ECAD Model:
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Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
AEC-Q101
EliteSiC
Brand: onsemi
Kumpigurasyon: Single
Tagal ng Pagbagsak: 10 ns
Forward Transconductance - Min: 13 S
Packaging: Tube
Uri ng Produkto: SiC MOSFETS
Tagal ng Pagtaas: 20 ns
Series: NVHL080N120SC1A
Dami ng Pack ng Pabrika: 30
Subcategory: Transistors
Polarity ng Transistor: N-Channel
Karaniwang Tagal ng Delay ng Pag-off: 22 ns
Karaniwang Tagal ng Delay ng Pag-on: 13 ns
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Mga Piniling Attribute: 0

Datasheet

PCN

Mga Kodigo sa Pagsunod
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Mga Klasipikasyon ng Pinagmulan
Bansang Pinagmulan:
Korea, Republic of
Bansang Pinagmulan ng Pag-assemble:
China
Bansa ng Diffusion:
Korea, Republic of
Ang bansa ay maaaring magbago sa oras ng pagpapadala.

1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive according to AEC-Q101 grade certification.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
31 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Matagal na lead time na iniulat sa produktong ito.
Minimum: 450   Mga Multiple: 450
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱409.82 ₱184,419.00
₱394.48 ₱355,032.00

May di-inaasahang error na nangyari.


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