TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

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Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Frequency ng Pagpapatakbo Supply Voltage ng Pagpapatakbo Supply Current ng Pagpapatakbo Gain Uri Isitilo ng Mounting Package / Case Teknolohiya P1dB - Compression Point Minimum na Operating Temperature Maximum na Operating Temperature Series Packaging
Qorvo RF Amplifier .03-2.5GHz 10W GaN Sm Sig. Gain 19dB Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 25
Mult.: 25

2.5 GHz 30 V 360 mA 19 dB Power Amplifiers SMD/SMT Die GaN 32 dBm TGA2237 Gel Pack
Qorvo RF Amplifier 30-2500MHz 10W GaN PAE > 50% Gain 19dB Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 25
Mult.: 25

30 MHz to 2.5 GHz 32 V 360 mA 19 dB Power Amplifiers SMD/SMT QFN-32 GaN SiC 33 dBm - 40 C + 85 C TGA2237 Waffle