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NTBL045N065SC1

Name: onsemi NTBL045N065SC1
Brand: onsemi
SKU: 863-NTBL045N065SC1
Price: 720.36 PHP
Availability: InStock

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Mouser #:

863-NTBL045N065SC1

Mfr. #:

NTBL045N065SC1

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs SIC MOS TOLL 650V

Datasheet:

NTBL045N065SC1 Datasheet

ECAD Model:

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May Stock: 1,374

Stock:: 1,374 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 1374 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱720.36	₱720.36
	₱457.04	₱4,570.40
	₱447.18	₱44,718.00
	₱417.60	₱417,600.00
Buo Reel (Mag-order sa multiple ng 2000)
	₱359.60	₱719,200.00
4,000	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PSOF-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	73 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	EliteSiC
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Packaging:	Cut Tape
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	14 ns
Series:	NTBL045N065SC1
Dami ng Pack ng Pabrika:	2000
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	26 ns
Karaniwang Tagal ng Delay ng Pag-on:	13 ns

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Datasheet

NTBL045N065SC1 Datasheet

PCN

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

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NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.