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SIA469DJ-T1-GE3

Name: Vishay SIA469DJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIA469DJ-T1-GE3
Price: 34.22 PHP
Availability: InStock

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Mouser #:

78-SIA469DJ-T1-GE3

Mfr. #:

SIA469DJ-T1-GE3

Mfr.:

Vishay Semiconductors

Paglalarawan:

MOSFETs -30V Vds 20V Vgs PowerPAK SC-70

Datasheet:

SIA469DJ-T1-GE3 Datasheet

ECAD Model:

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Higit Pang Impormasyon

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May Stock: 102,985

Stock:: 102,985 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 28 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 3000)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱34.22	₱34.22
	₱21.17	₱211.70
	₱13.57	₱1,357.00
	₱10.21	₱5,105.00
	₱9.05	₱9,050.00
Buo Reel (Mag-order sa multiple ng 3000)
	₱7.77	₱23,310.00
	₱7.08	₱42,480.00
	₱6.09	₱54,810.00
	₱5.92	₱142,080.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Vishay
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	SC-70-6
Polarity ng Transistor:	P-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	32 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15.6 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	15 ns
Forward Transconductance - Min:	15 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	17 ns
Series:	SIA
Dami ng Pack ng Pabrika:	3000
Subcategory:	Transistors
Uri ng Transistor:	1 P-Channel
Karaniwang Tagal ng Delay ng Pag-off:	30 ns
Karaniwang Tagal ng Delay ng Pag-on:	7 ns
Timbang ng Unit:	45.597 mg

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Mga Piniling Attribute: 0

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Datasheet

SIA469DJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

SiA469DJ 30V P-Channel TrenchFET® Gen III MOSFET

Vishay / Siliconix SiA469DJ 30V P-Channel TrenchFET® Gen III MOSFET provides low on-resistance in a single-configuration PowerPAK® SC-70 package size. The SiA469DJ MOSFET operates in a -55°C to +150°C temperature range. Vishay / Siliconix SiA469DJ 30V P-Channel TrenchFET Gen III MOSFET is RoHS compliant and halogen free. Typical applications include load switches, DC/DC converters, high-speed switching, and power management in battery-operated, mobile, and wearable devices.

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen III P-Channel Power MOSFETs

Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs feature low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes, including micro-foot, PowerPAK®, and TSOP-6. Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Typical applications include load switches, adapter switches, battery switches, DC motors, and charger switches.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.