HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs Polar Power MOSFET HiPerFET Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 300 V 170 A 18 mOhms - 20 V, 20 V 4.5 V 258 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 210 Amps 200V 0.0105 Rds Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 200 V 210 A 10.5 mOhms - 20 V, 20 V - 55 C + 175 C 1.5 kW HiPerFET Tube
IXYS MOSFETs POLAR PWR MOSFET 100V, 300A Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 100 V 300 A 5.5 mOhms - 20 V, 20 V 5 V 279 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFETs 40 Amps 1100V 0.2600 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.1 kV 40 A 260 mOhms - 30 V, 30 V 3.5 V 310 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChHiPerFET-Q3 Class TO-264(3) Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.1 kV 40 A 260 mOhms - 30 V, 30 V 3.5 V 300 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 900 V 52 A 160 mOhms - 30 V, 30 V 6.5 V 308 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/62A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 800 V 62 A 140 mOhms - 30 V, 30 V 3.5 V 270 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 70A PLUS264 Power MOSFET Lead-Time 26 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 70 A 89 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 1.785 mW Enhancement HiPerFET Tube
IXYS MOSFETs 82 Amps 600V 0.75 Ohm Rds Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 600 V 82 A 75 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/82A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 600 V 82 A 75 mOhms - 30 V, 30 V 275 nC 1.56 kW HiPerFET Tube
IXYS MOSFETs 850V/90A Ultra Junction X-Class Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 850 V 90 A 41 mOhms - 30 V, 30 V 3.5 V 340 nC - 55 C + 150 C 1.785 kW Enhancement HiPerFET Tube

IXYS MOSFETs 100 Amps 250V 0.027 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 100 A 27 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs 102 Amps 0V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 102 A HiPerFET Tube

IXYS MOSFETs 110 Amps 150V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 150 A 13 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs 110 Amps 0V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 110 A 24 mOhms - 20 V, 20 V 3 V 157 nC - 55 C + 175 C 694 W Enhancement HiPerFET Tube

IXYS MOSFETs Trench HiperFETs Power MOSFETs Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 23 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 120A N-CH X3CLASS Lead-Time 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 11 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/12A TO-247 Hindi Naka-stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id12 BVdass800 Lead-Time para sa Hindi Naka-stock 29 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 12 A 850 mOhms - 30 V, 30 V - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs TO247 850V 14A N-CH X3CLASS Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 HiPerFET Tube

IXYS MOSFETs Trench HiperFETs Power MOSFETs Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 150 A 15 mOhms - 20 V, 20 V 3 V 177 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD Lead-Time 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 150 A 9 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFETs 15 Amps 1000V 0.76 Rds Lead-Time 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 760 mOhms - 30 V, 30 V 6.5 V 97 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFETs 160 Amps 150V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 160 A 9.6 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET Lead-Time para sa Hindi Naka-stock 54 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 360 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube