HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 120 A 27 mOhms - 20 V, 20 V 3 V 150 nC - 55 C + 150 C 1.13 mW Enhancement HiPerFET Tube
IXYS MOSFETs 120A 300V Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 120 A 24 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/120A Ultra Junction X2 Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25
Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 250V 140A Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 140 A 17 mOhms - 20 V, 20 V 5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 160A 300V Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 160 A 19 mOhms - 20 V, 20 V 5 V 335 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube
IXYS MOSFETs 170 Amps 200V 0.014 Rds Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 170 A 14 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 170A 200V Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 170 A 11 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 175 C 1.15 kW Enhancement HiPerFET Tube
IXYS MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 70V 0.006 Rds Lead-Time para sa Hindi Naka-stock 34 (na) Linggo
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HiPerFET Tube
IXYS MOSFETs 180 Amps 150V 0.011 Rds Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 180 A 11 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs 20 Amps 1200V 1 Rds Lead-Time para sa Hindi Naka-stock 49 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 20 A 570 mOhms - 30 V, 30 V 6.5 V 193 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 220Amps 150V Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 220 A 9 mOhms - 20 V, 20 V 4.5 V 162 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 24 Amps 800V 0.4 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 5 V 105 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 26 Amps 1000V Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 20 A 390 mOhms - 30 V, 30 V - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 27 Amps 800V 0.32 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 27 A 320 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 170 V 320 A 5.2 mOhms - 20 V, 20 V 2.5 V 640 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 800V 0.27 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V 5 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V 140 nC + 150 C 1 kW HiPerFET Tube
IXYS MOSFETs 600V 36A Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-264(3) Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3 mOhms - 20 V, 20 V 2.5 V 365 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 40 A 210 mOhms - 30 V, 30 V 6.5 V 230 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 6.5 V 185 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 600V 48A Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 48 A 135 mOhms - 30 V, 30 V - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 48 A 140 mOhms - 30 V, 30 V 140 nC 1 kW HiPerFET Tube
IXYS MOSFETs 52A 1000V POWER MOSFET Hindi Naka-stock
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube