HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Kuwalipikasyon
Pangalang pangkalakal
Packaging

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/25A
Datasheet
Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 25 A 154 mOhms - 30 V, 30 V 3.5 V 93 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 38A
Datasheet
Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 130 mOhms - 20 V, 20 V 2.5 V 330 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id26 BVdass800
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 25 A 200 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 48A
Datasheet
Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 32 A 150 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/32A
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 32 A 154 mOhms - 30 V, 30 V 140 nC 500 W HiPerFET Tube

IXYS MOSFETs 3.5 Amps 1000V 3 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 3.5 A 3 Ohms - 20 V, 20 V - 40 C + 150 C 80 W Enhancement HiPerFET Tube

IXYS MOSFETs HiPerFET Power MOSFETs
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms HiPerFET Tube

IXYS MOSFETs 500V 64A
Datasheet
Lead-Time para sa Hindi Naka-stock 35 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 35 A 95 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/45A
Datasheet
Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 45 A 94 mOhms - 30 V, 30 V 3.5 V 145 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id36 BVdass600
Datasheet
Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 36 A 105 mOhms - 30 V, 30 V 3 V 200 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/42A
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 104 mOhms - 30 V, 30 V 190 nC 568 W HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 600 V 48 A 76 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 140 A 9.6 mOhms - 20 V, 20 V 2.5 V 127 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 14 Amps 800V 0.72 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 800 V 14 A 720 mOhms 400 W HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-268AA
Datasheet
Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 175 V 150 A 9.7 mOhms - 20 V, 20 V 2.5 V 233 nC - 55 C + 175 C 880 W Enhancement HiPerFET Tube
IXYS MOSFETs Trench HiperFETs Power MOSFETs
Datasheet
Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 200 V 150 A 15 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 150 A 9 mOhms - 10 V, 10 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET Discretes
Datasheet
Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 400
Mult.: 400
Reel: 400

Si SMD/SMT TO-268-3 1 Channel 1 kV 15 A 1.05 Ohms - 30 V, 30 V 3.5 V 64 nC 690 W Enhancement HiPerFET Reel
IXYS MOSFETs 16 Amps 800V 0.6 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 800 V 16 A 600 mOhms - 30 V, 30 V - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 180 A 7.5 mOhms - 20 V, 20 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 18 A 660 mOhms - 30 V, 30 V 90 nC + 150 C 830 W HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Hindi Naka-stock
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 900 V 18 A 600 mOhms - 30 V, 30 V - 55 C + 150 C 540 W HiPerFET Tube
IXYS MOSFETs 20 Amps 1000V 1 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 20 A 570 mOhms - 30 V, 30 V 6.5 V 126 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs 20 Amps 800V 0.52 Rds
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 N-Channel 1 Channel 800 V 20 A 520 mOhms - 30 V, 30 V 5 V 86 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 24 Amps 800V 0.4 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 100 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube