HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs 24 Amps 800V 0.4 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 100 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 26A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 26 A 270 mOhms - 30 V, 30 V 2.5 V 72 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 30A Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT TO-268-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 30 A 200 mOhms - 30 V, 30 V 3.5 V 62 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 30A Hindi Naka-stock
Min.: 90
Mult.: 30

Si SMD/SMT TO-268-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-268AA Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 30 A 220 mOhms - 30 V, 30 V 3.5 V 68 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 36A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 5 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 850 V 40 A 145 mOhms - 30 V, 30 V 3.5 V 98 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/44A Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 93 nC 830 W HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 50 A 80 mOhms - 30 V, 30 V 65 nC 690 W HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-268AA Hindi Naka-stock
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 600 V 50 A 73 mOhms - 30 V, 30 V 2.5 V 116 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs PolarP2 Power MOSFET Hindi Naka-stock
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 52 A 120 mOhms - 30 V, 30 V - 55 C + 150 C 960 W HiPerFET Tube
IXYS MOSFETs 650V/60A TO-268HV Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 3.5 V 108 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs 69 Amps 300V 0.049 Rds Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 69 A 49 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 70 A 40 mOhms - 30 V, 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/70A Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 70 A 54 mOhms - 30 V, 30 V 98 nC 830 W HiPerFET Tube
IXYS MOSFETs HiPerFET Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 HiPerFET Tube
IXYS MOSFETs IXFT80N65X2HV TRL Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 400
Mult.: 400
Reel: 400

Si SMD/SMT D3PAK-3 (TO-268-3) 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC 890 W Enhancement HiPerFET Reel
IXYS MOSFETs TRENCH HIPERFET PWR MOSFET 300V 86A Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 86 A 43 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs Trench HiperFET Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 HiPerFET Tube
IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 300V 88A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 88 A 40 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs 120V 300V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 24 mOhms - 20 V, 20 V 5 V 265 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs 140A 250V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 140 A 17 mOhms - 20 V, 20 V 5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiperFET Power MOSFET Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 200 V 170 A 14 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 170A 200V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 200 V 170 A HiPerFET Tube