HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging

IXYS MOSFETs 180 Amps 150V 0.011 Ohm Rds Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 180 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 200 Amps 100V 0.0075 Rds Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 200 A 7.5 mOhms - 20 V, 20 V 2.5 V 235 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 170 V 220 A 6.3 mOhms - 20 V, 20 V 2.5 V 500 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 150 V 240 A 5.2 mOhms - 20 V, 20 V 2.5 V 460 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 250 A 6.5 mOhms - 20 V, 20 V 3 V 205 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs 26 Amps 1000V Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 20 A 390 mOhms - 30 V, 30 V - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFETs 27 Amps 800V 0.32 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 27 A 320 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 170 V 320 A 5.2 mOhms - 20 V, 20 V 2.5 V 640 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1000V 0.32 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 6.5 V 225 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A Hindi Naka-stock
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 3.5 V 195 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 800V 0.27 Rds Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiPerFETs MOSFET w/Fast Diode Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 32 A 300 mOhms - 30 V, 30 V 6.5 V 215 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 44A Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 44 A 130 mOhms - 20 V, 20 V 4.5 V 330 nC - 55 C + 150 C 560 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 185 nC 1.25 kW HiPerFET Tube

IXYS MOSFETs 600V 48A Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 135 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 140 mOhms - 30 V, 30 V 140 nC 1 kW HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/64A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 145 nC 1 kW HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 190 nC 1.25 kW HiPerFET Tube

IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 66 A 65 mOhms - 30 V, 30 V 3.5 V 230 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD Hindi Naka-stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 600 V 90 A 38 mOhms - 30 V, 30 V 2.5 V 210 nC - 55 C + 150 C 1.1 kW Enhancement HiPerFET Tube

IXYS MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET Lead-Time 26 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 98 A 50 mOhms - 30 V, 30 V 5 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 600 V 4 A 2.2 Ohms HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-252D Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 350
Mult.: 70

Si SMD/SMT DPAK-3 (TO-252-3) HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 500 V 5 A 1.65 Ohms HiPerFET Tube
IXYS MOSFETs 100 Amps 40V Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 100 A 7 mOhms - 20 V, 20 V 2 V 25.5 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube