HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs 160 Amps 100V 6.9 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 160 A 7 mOhms - 55 C + 175 C 430 W Enhancement HiPerFET Tube
IXYS MOSFETs 170 Amps 75V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 170 A 5.4 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 55V 0.0042 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 200 A 3.3 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-263D2 Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-7 N-Channel 1 Channel 55 V 200 A 4.2 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 20 A 185 mOhms - 30 V, 30 V 2.5 V 27 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-263D2 Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 230 A 2.9 mOhms - 15 V, 15 V 2 V 140 nC - 55 C + 175 C 340 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-263D2 Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-7 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 145 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-263D2 Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 260 A 3.3 mOhms - 20 V, 20 V 2 V 140 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 260 Amps 55V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-7 N-Channel 1 Channel 55 V 260 A 3.3 mOhms - 20 V, 20 V 4 V 140 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 270 A 2.2 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 270 A 2.2 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 200V 78 Rds Hindi Naka-stock
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 32 A 78 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-263D2 Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-7 N-Channel 1 Channel 36 V 380 A 1 mOhms - 15 V, 15 V 2 V 260 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 48 Amps 200V 50 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 48 A 50 mOhms - 30 V, 30 V - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 700 V 2 A 850 mOhms - 30 V, 30 V 2.5 V 11.8 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFETs 50 Amps 250V 50 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 50 A 60 mOhms - 30 V, 30 V 5 V 78 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs 56 Amps 150V 36 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) 150 V 56 A 36 mOhms HiPerFET Tube
IXYS MOSFETs 60 Amps 200V Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 60 A 40 mOhms HiPerFET Tube
IXYS MOSFETs 70 Amps 75V 0.0120 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 70 A 12 mOhms - 20 V, 20 V 2 V 46 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 76 Amps 250V 39 Rds Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 76 A 42 mOhms - 20 V, 20 V 5 V 92 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs TrenchT2 MOSFETs Power MOSFETs Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 120 V 80 A 17 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 175 C 325 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube