HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs TO268 650V 34A N-CH X4CLASS Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/440A TrenchT4 Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 40 V 440 A 1.25 mOhms - 15 V, 15 V 2 V 480 nC - 55 C + 175 C 940 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel Trench Gate TrenchT2 MOSFET Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 440 A 1.8 mOhms - 20 V, 20 V 2 V 405 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFETs Trench T2 Power MOSFET Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 40 V 500 A 1.6 mOhms - 20 V, 20 V 3.5 V 405 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO251 700V 4A N-CH X2CLASS Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 2 A 850 mOhms - 30 V, 30 V 2.5 V 11.8 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 350
Mult.: 70

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 650V 102A N-CH X2CLASS Lead-Time para sa Hindi Naka-stock 41 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 102 A 30 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 55 V 55 A 1.6 mOhms - 20 V, 20 V 2 V 595 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Lead-Time para sa Hindi Naka-stock 44 (na) Linggo
Min.: 300
Mult.: 20
Si SMD/SMT SMPD-24 N-Channel 500 V 63 A 43 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 300 V 102 A 20 mOhms - 20 V, 20 V 3 V 376 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 250 V 130 A 13 mOhms - 20 V, 20 V 3 V 364 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 200 V 156 A 8.3 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 150 V 235 A 4.4 mOhms - 20 V, 20 V 5 V 715 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1.1 kV 24 A 290 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 1
Mult.: 1

Si SMD/SMT SMPD-24 N-Channel 1 Channel 100 V 334 A 2.6 mOhms - 20 V, 20 V 2.5 V 670 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFETs HiperFET Pwr MOSFET Q3-Class Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 kV 30 A 245 mOhms - 30 V, 30 V 264 nC - 55 C + 150 C HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 55 V 550 A 1.3 mOhms - 20 V, 20 V 3.8 V 595 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V 600A Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 40 V 600 A 1.3 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 650v/32A Power MOSFET N/A

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 32 A 135 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube