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6ED2230S12TXUMA1

Name: Infineon 6ED2230S12TXUMA1
Brand: Infineon Technologies
SKU: 726-6ED2230S12TXUMA1
Price: 237.22 PHP
Availability: InStock

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Mouser #:

726-6ED2230S12TXUMA1

Mfr. #:

6ED2230S12TXUMA1

Mfr.:

Infineon Technologies

Paglalarawan:

Gate Drivers 1200V, 0.65A 3-Phase BSD, OCP, EN & FAUL

Datasheet:

6ED2230S12TXUMA1 Datasheet (PDF)

ECAD Model:

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May Stock: 61

Stock:: 61

Maaaring Ipadala Agad

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Inoorder:: 2,000

Inaasahan 2/23/2026
Lead-Time ng Pabrika:: 19

(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱237.22	₱237.22
	₱179.80	₱1,798.00
	₱165.30	₱4,132.50
	₱149.64	₱14,964.00
	₱142.10	₱35,525.00
	₱137.46	₱68,730.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱132.82	₱132,820.00
	₱127.60	₱255,200.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga Gate Driver
RoHS:
Produkto:	IGBT, MOSFET Gate Drivers
Uri:	High-Side, Low-Side
Isitilo ng Mounting:	SMD/SMT
Package / Case:	DSO-24
Dami ng Driver:	6 Driver
Dami ng Output:	6 Output
Current ng Output:	650 mA
Supply Voltage - Min:	13 V
Supply Voltage - Max:	20 V
Kumpigurasyon:	Inverting
Tagal ng Pagtaas:	35 ns
Tagal ng Pagbagsak:	20 ns
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 125 C
Series:	Infineon SOI
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Uri ng Logic:	CMOS
Maximum na Tagal ng Delay sa Pag-Off:	600 ns
Maximum na Tagal ng Delay sa Pag-On:	600 ns
Maselan sa Moisture:	Yes
Supply Current ng Pagpapatakbo:	175 uA
Pd - Power Dissipation:	1.3 W
Uri ng Produkto:	Gate Drivers
Propagation Delay - Max:	900 ns
Shutdown:	Shutdown
Dami ng Pack ng Pabrika:	1000
Subcategory:	PMIC - Power Management ICs
Teknolohiya:	Si
Pangalang pangkalakal:	EiceDRIVER
Mga Alias ng # ng Piyesa :	6ED2230S12T SP001656578
Timbang ng Unit:	807.300 mg

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Mga Piniling Attribute: 0

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Datasheet

6ED2230S12TXUMA1 Datasheet (PDF)

Product Catalogs

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

6ED223xS12T EiceDRIVER™ Gate Driver ICs

Infineon Technologies 6ED223xS12T EiceDRIVER™ Level Shift Gate Driver ICs are high voltage (up to 1200V), high-speed insulated-gate bipolar transistors (IGBTs) with three independent high-side and low-side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable a ruggedized monolithic construction. Logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. This resistor can also derive an over‐current protection (OCP) function that terminates all six outputs.