FF8MR12W1M1HB11BPSA1

Infineon Technologies
726-FF8MR12W1M1HB11B
FF8MR12W1M1HB11BPSA1

Mfr.:

Paglalarawan:
Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 402

Stock:
402 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
10 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱6,519.78 ₱6,519.78
₱5,476.94 ₱54,769.40
₱4,935.80 ₱592,296.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Infineon
Kategorya ng Produkto: Mga Module ng Discrete Semiconductor
RoHS:  
Half Bridge
Si
Tray
Brand: Infineon Technologies
Uri ng Produkto: Discrete Semiconductor Modules
Dami ng Pack ng Pabrika: 24
Subcategory: Discrete and Power Modules
Pangalang pangkalakal: EasyDUAL
Mga Alias ng # ng Piyesa : FF8MR12W1M1H_B11 SP005634498
Nahanap na mga produkto:
Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang
Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Reliable & Efficient Power Supply for Data Centers

Infineon Technologies Reliable and Efficient Power Supply for Data Centers are scalable solutions with power ratings from approximately 5kW to 50/60kW. This Infineon solution is ideal for uninterruptible power supplies (UPS) that require high power density and energy efficiency. These modules leverage various chip technologies, including Si IGBT, CoolSiC™ hybrid, and CoolSiC MOSFET, to meet diverse requirements for cost-effectiveness and performance. Infineon's portfolio addresses all system levels of a UPS with different voltage classes, and are set to expand offerings to include lower power rating classes.

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.