NVH4L018N075SC1

onsemi
863-NVH4L018N075SC1
NVH4L018N075SC1

Mfr.:

Paglalarawan:
SiC MOSFETs SIC MOS TO247-4L 750V

ECAD Model:
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Availability

Stock:
1,800 Maaaring Ipadala sa loob ng 20 (na) Araw
Minimum: 450   Mga Multiple: 450
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱1,508.00 ₱678,600.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC MOSFET
RoHS:  
TO-247-4
EliteSiC
Brand: onsemi
Packaging: Tube
Uri ng Produkto: SiC MOSFETS
Series: NVH4L018N075SC1
Dami ng Pack ng Pabrika: 30
Subcategory: Transistors
Teknolohiya: SiC
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Mga Piniling Attribute: 0

USHTS:
8541290095
ECCN:
EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.