Asynchronous SRAMs

Renesas Electronics Asynchronous SRAMs are based on high-performance, high-reliability CMOS technology. The technology and innovative circuit design techniques provide a cost-effective solution for high-speed async SRAM memory needs. Fully static asynchronous circuitry requires no clocks or refresh for operation. Renesas delivers asynchronous SRAM in RoHS 6/6-compliant (Green) packaging using industry-standard package options.

Mga Resulta: 107
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Dami RoHS ECAD Model Laki ng Memory
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Packaging

Renesas Electronics SRAM SRAM 4MB FAST X16 5V SOJ 12NS -40TO85C
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns 5.5 V 4.5 V 160 mA - 40 C + 85 C SMD/SMT SOJ-44 Tray
Renesas Electronics SRAM SRAM 4MB FAST X8 3V SOJ 12NS 0TO70C
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

4 Mbit 512 k x 8 12 ns 3.6 V 3 V 100 mA 0 C + 70 C SMD/SMT SOJ-36 Tray

Renesas Electronics SRAM SRAM 4MB FAST X16 3V SOJ 12NS 0TO70C
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns 3.6 V 3 V 130 mA 0 C + 70 C SMD/SMT SOJ-44 Tray

Renesas Electronics SRAM SRAM 4MB FAST X16 3V SOJ 12NS -40TO85C
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns 3.6 V 3 V 130 mA - 40 C + 85 C SMD/SMT SOJ-44 Tray

Renesas Electronics SRAM SRAM 4MB FAST X16 3V SOJ 12NS 0TO70C
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns 3.6 V 3 V 130 mA 0 C + 70 C SMD/SMT SOJ-44 Tray
Renesas Electronics SRAM 32K X 16 SRAM
Datasheet
Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000
Hindi
1 Mbit 64 k x 16 12 ns Parallel 3.6 V 3 V 150 mA 0 C + 70 C SMD/SMT CABGA-48 Reel
Renesas Electronics SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Datasheet
Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1
Mult.: 1
Hindi
4 Mbit 256 k x 16 12 ns Parallel 3.6 V 3 V 170 mA - 40 C + 85 C SMD/SMT CABGA-48 Tray