SyncBurst SRAMs

GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. GSI Technology SyncBurst SRAMs are used in military, networking, industrial, automotive, and medical imaging applications where a mid-range performance point is required.

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Packaging
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
Datasheet
13May Stock
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 210 mA 0 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 128K x 36 4M
Datasheet
39May Stock
Min.: 1
Mult.: 1

4 Mbit 128 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 32 8M
Datasheet
25May Stock
Min.: 1
Mult.: 1

9 Mbit 256 k x 32 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5/3.3V 8M x 36 288M
Datasheet
30May Stock
Min.: 1
Mult.: 1

288 Mbit 8 M x 36 4 ns 400 MHz Parallel 3.6 V 2.3 V 560 mA, 840 mA - 40 C + 100 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 72 72M
Datasheet
2May Stock
Min.: 1
Mult.: 1

72 Mbit 1 M x 72 5.5 ns 300 MHz Parallel 3.6 V 2.3 V 385 mA, 540 mA - 40 C + 85 C SMD/SMT BGA-209 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M
Datasheet
37May Stock
Min.: 1
Mult.: 1
9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 150 mA, 175 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M
Datasheet
719Inoorder
Min.: 1
Mult.: 1

72 Mbit 2 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 270 mA, 345 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
Datasheet
36Inaasahan 8/28/2026
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M
Datasheet
18Inaasahan 8/13/2026
Min.: 1
Mult.: 1

36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 210 mA, 220 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M
Datasheet
42Inaasahan 8/28/2026
Min.: 1
Mult.: 1

9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
Datasheet
36Inaasahan 1/18/2027
Min.: 1
Mult.: 1

18 Mbit 512 k x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 230 mA, 250 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M
Datasheet
18May Stock
Min.: 1
Mult.: 1
Hindi
36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 190 mA, 200 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 8M x 18 144M
Datasheet
Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 15
Mult.: 15

144 Mbit 8 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 295 mA, 360 mA 0 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 4M x 36 144M
Datasheet
Lead-Time para sa Hindi Naka-stock 3 (na) Linggo
Min.: 10
Mult.: 10

144 Mbit 4 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 330 mA, 400 mA 0 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
Datasheet
Lead-Time para sa Hindi Naka-stock 5 (na) Linggo
Min.: 1
Mult.: 1
18 Mbit 512 k x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 270 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
Datasheet
Lead-Time para sa Hindi Naka-stock 3 (na) Linggo
Min.: 1
Mult.: 1
18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5/3.3V 8M x 36 288M
Datasheet
Lead-Time para sa Hindi Naka-stock 4 (na) Linggo
Min.: 10
Mult.: 10

288 Mbit 8 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 520 mA, 610 mA - 40 C + 100 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 32 32M
Datasheet
Lead-Time para sa Hindi Naka-stock 6 (na) Linggo
Min.: 1
Mult.: 1

36 Mbit 1 M x 32 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 210 mA, 220 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 36M
Datasheet
Lead-Time para sa Hindi Naka-stock 3 (na) Linggo
Min.: 14
Mult.: 14
72 Mbit 4 M x 18 7.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 290 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M
Datasheet
Lead-Time para sa Hindi Naka-stock 4 (na) Linggo
Min.: 14
Mult.: 14
72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 300 mA, 435 mA - 55 C + 125 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M
Datasheet
Lead-Time para sa Hindi Naka-stock 5 (na) Linggo
Min.: 1
Mult.: 1

9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 150 mA, 175 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 32 8M
Datasheet
Lead-Time para sa Hindi Naka-stock 6 (na) Linggo
Min.: 1
Mult.: 1
9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM
Datasheet
Hindi Naka-stock
Min.: 21
Mult.: 21
18 Mbit 256 k x 72 5 ns 300 MHz Parallel 3.6 V 2.3 V 340 mA, 465 mA - 55 C + 125 C SMD/SMT BGA-209
GSI Technology SRAM
Datasheet
Hindi Naka-stock
Min.: 14
Mult.: 14
36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 290 mA - 55 C + 125 C SMD/SMT BGA-165
GSI Technology SRAM
Datasheet
Hindi Naka-stock
Min.: 14
Mult.: 14
36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 290 mA - 55 C + 125 C SMD/SMT BGA-165