32 bit DRAM

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 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Uri
Laki ng Memory
Lapad ng Data Bus
Maximum na Clock Frequency
Package / Case
Organisasyon
Oras ng Pag-access
Supply Voltage - Min
Supply Voltage - Max
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
Intelligent Memory DRAM ECC LPDDR4, 8Gb, 1.1V, 256Mx32, 1600MHz (3200Mbps), -40C to +95C, FBGA-200
Datasheet
Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 32 bit 1.6 GHz FBGA-200 256 M x 32 1.06 V 1.17 V - 40 C + 95 C IME8G32L4 Tray
Infineon Technologies S80KS2564GACHA043
Infineon Technologies DRAM SPCM
Datasheet
Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 85 C Reel
Infineon Technologies S80KS2564GACHB040
Infineon Technologies DRAM SPCM
Datasheet
Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 260
Mult.: 260

HyperRAM 256 Mbit 32 bit 200 MHz FBGA-49 35 ns 1.7 V 2 V - 40 C + 105 C Tray
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V 0 C + 70 C IS42RM32160E Reel
ISSI DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V 0 C + 70 C IS42SM32160E Reel
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 240
Mult.: 240

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V 0 C + 70 C IS42RM32160E Tray
ISSI DRAM 512M, 3.3V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 240
Mult.: 240

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.7 V 3.6 V 0 C + 70 C IS42SM32160E Tray
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 40 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 40 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 1.06 V 1.17 V - 40 C + 105 C Reel
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 40 (na) Linggo
Min.: 136
Mult.: 136

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Tray
ISSI DRAM Automotive (Tc: -40 to +95C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 40 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA(10mmx14.5mm, 1.1mm max thickness) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 40 (na) Linggo
Min.: 136
Mult.: 136

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 105 C Tray
ISSI DRAM 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 36 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 95 C Reel
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R
Datasheet
Hindi Naka-stock
Min.: 2,500
Mult.: 2,500

SDRAM - LPDDR4X 4 Gbit 32 bit 1.6 GHz BGA-200 128 M x 32 570 mV 650 mV - 40 C + 105 C Tray
ISSI DRAM 512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM Mobile 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 2.3 V 3 V - 40 C + 85 C IS42RM32160E Reel
ISSI DRAM 256M, 2.5V, Mobile SDRAM, 8Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM Mobile 256 Mbit 32 bit 133 MHz BGA-90 8 M x 32 6 ns 2.3 V 3 V - 40 C + 85 C IS42RM32800K Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM 512 Mbit 32 bit 167 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS, IT, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 1,500
Mult.: 1,500
: 1,500

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, RoHS T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 1,500
Mult.: 1,500
: 1,500

SDRAM 512 Mbit 32 bit 167 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 240
Mult.: 240

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS, IT
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 240
Mult.: 240

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS, IT, T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V - 40 C + 85 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 90 ball BGA (8mmx13mm) RoHS T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

SDRAM 512 Mbit 32 bit 133 MHz BGA-90 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F Reel
ISSI DRAM 512M, 3.3V, SDRAM, 16Mx32, 133Mhz @CL2 , 86 pin TSOP II, RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 108
Mult.: 108

SDRAM 512 Mbit 32 bit 133 MHz TSOP-II-86 16 M x 32 6 ns 3 V 3.6 V 0 C + 70 C IS42S32160F