QPD0011 30W/60W 48V GaN on SiC HEMT

Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor) is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.

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Qorvo RF Amplifier 3.4-3.6GHz 40Wx80W GaN Transistor Pair Hindi Naka-stock
Min.: 100
Mult.: 100
Reel: 100

3.3 GHz to 3.6 GHz 48 V 65 mA 13.3 dB General Purpose Amplifiers SMD/SMT GaN SiC QPD0011 Reel
Qorvo QPD0011JTR13
Qorvo RF Amplifier 3.4-3.6GHz 40Wx80W 48V GaN Transistor Pa Hindi Naka-stock
Min.: 2,500
Mult.: 2,500
Reel: 2,500

3.4 GHz to 3.6 GHz 12.6 dB SMD/SMT GaN SiC QPD0011 Reel