LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

Mga Resulta: 2
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Polarity ng Transistor
Teknolohiya
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Frequency ng Pagpapatakbo
Gain
Output Power
Maximum na Operating Temperature
Isitilo ng Mounting
Package / Case
Packaging
STMicroelectronics RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
Datasheet
Hindi Naka-stock
Min.: 100
Mult.: 100
Reel: 100

N-Channel Si 2.5 A 28 V 1 Ohms 945 MHz 16 dB 150 W + 200 C Through Hole LBB-4 Reel
STMicroelectronics RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Datasheet
Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 1
Mult.: 1

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk