SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
SCT012W90G3-4AG
STMicroelectronics
1:
₱1,203.50
640 May Stock
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT012W90G3-4AG
Bagong Produkto
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
640 May Stock
1
₱1,203.50
10
₱1,026.02
100
₱887.40
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP247-3
N-Channel
1 Channel
900 V
110 A
15.8 mOhms
- 10 V, + 22 V
3.1 V
138 nC
- 55 C
+ 200 C
625 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
360°
SCT025W120G3AG
STMicroelectronics
1:
₱1,046.90
502 May Stock
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT025W120G3AG
Bagong Produkto
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
502 May Stock
1
₱1,046.90
10
₱838.10
100
₱724.42
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCT015W120G3-4AG
STMicroelectronics
1:
₱1,405.34
600 Inaasahan 10/26/2026
# ng Piyesa ng Mouser
511-SCT015W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
600 Inaasahan 10/26/2026
1
₱1,405.34
10
₱1,150.14
100
₱1,015.58
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
129 A
15 mOhms
- 18 V, + 18 V
4.2 V
167 nC
- 55 C
+ 200 C
673 W
Enhancement
AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCT040W120G3-4
STMicroelectronics
1:
₱660.04
100 Inoorder
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT040W120G3-4
Bagong Produkto
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100 Inoorder
1
₱660.04
10
₱537.66
100
₱447.76
500
₱399.04
1,000
₱338.72
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 10 V, + 22 V
3.1 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
SCT019W120G3-4AG
STMicroelectronics
1:
₱1,075.90
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT019W120G3-4AG
Bagong Produkto
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
1
₱1,075.90
10
₱861.30
100
₱744.72
Bumili
Min.: 1
Mult.: 1
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
90 A
26 mOhms
- 10 V, + 22 V
4.2 V
120 nC
- 55 C
+ 200 C
486 W
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
SCT025W120G3-4
STMicroelectronics
600:
₱680.34
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT025W120G3-4
Bagong Produkto
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bumili
Min.: 600
Mult.: 600
Mga detalye
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
-10 V, 22 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT070W120G3-4
STMicroelectronics
1:
₱633.94
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT070W120G3-4
Bagong Produkto
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
1
₱633.94
10
₱378.74
100
₱322.48
500
₱300.44
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP247-4
N-Channel
1.2 kV
30 A
87 mOhms
- 10 V, + 22 V
3 V
41 nC
- 55 C
+ 200 C
236 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
SCT070W120G3AG
STMicroelectronics
1:
₱704.12
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bagong Produkto
# ng Piyesa ng Mouser
511-SCT070W120G3AG
Bagong Produkto
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
1
₱704.12
10
₱573.04
100
₱477.92
600
₱425.72
1,200
₱361.34
Bumili
Min.: 1
Mult.: 1
Mga detalye
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTWA40N120G2V
STMicroelectronics
1:
₱1,046.32
Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
NRND
# ng Piyesa ng Mouser
511-SCTWA40N120G2V
NRND
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
1
₱1,046.32
10
₱796.92
100
₱669.90
Bumili
Min.: 1
Mult.: 1
Mga detalye
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
2.45 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement