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STP65N150M9

Name: STMicroelectronics STP65N150M9
Brand: STMicroelectronics
SKU: 511-STP65N150M9
Price: 255.2 PHP
Availability: InStock

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Mouser #:

511-STP65N150M9

Mfr. #:

STP65N150M9

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET

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Datasheet:

STP65N150M9 Datasheet (PDF)

ECAD Model:

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May Stock: 101

Stock:: 101 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱255.20	₱255.20
	₱149.64	₱1,496.40
	₱121.80	₱12,180.00
	₱104.98	₱52,490.00
	₱91.64	₱91,640.00
	₱88.16	₱176,320.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	32 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	140 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Tagal ng Pagbagsak:	10 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	5 ns
Series:	MDmesh M9
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Karaniwang Tagal ng Delay ng Pag-off:	40 ns
Karaniwang Tagal ng Delay ng Pag-on:	12 ns
Timbang ng Unit:	2 g

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Datasheet

STP65N150M9 Datasheet (PDF)

Other

Super-junction Power MOSFETs for best efficiency (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STP65N150M9 Power MOSFET

STMicroelectronics STP65N150M9 Power MOSFET is based on super-junction MDmesh M9 technology. The device is suitable for medium/high voltage MOSFETs featuring very low R_DS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it ideal for applications that require superior power density and outstanding efficiency.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.