200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

Mga Resulta: 25
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Infineon Technologies IRFP4668PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 11,914May Stock
9,200Inaasahan 6/17/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 200 V 130 A 9.7 mOhms - 30 V, 30 V 3 V 161 nC - 55 C + 175 C 520 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 23,866May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs IR FET >60-400V 2,519May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 76 A 20 mOhms - 20 V, 20 V 5 V 69 nC - 55 C + 175 C 375 W Enhancement Tube

Infineon Technologies MOSFETs IR FET >60-400V 586May Stock
800Inaasahan 6/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 93 A 17.5 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 62A 26mOhm 70nC Qg 3,671May Stock
7,200Inaasahan 4/1/2027
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms - 30 V, 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4229PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 1,189May Stock
1,000Inaasahan 4/1/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 250 V 46 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC 3,204May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 0.6A 2200mOhm 3.9nC 11,176May Stock
9,000Inaasahan 6/29/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms - 30 V, 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 10,938May Stock
34,000Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 13,113May Stock
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8 3,562May Stock
Min.: 1
Mult.: 1
: 4,000

Si SMD/SMT SOIC-8 N-Channel 1 Channel 200 V 3.7 A 78 mOhms - 20 V, 20 V 4 V 28 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 3,568May Stock
2,000Inaasahan 6/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 100mOhm 18A 18nC Qg for Aud 4,441May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms - 20 V, 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC 5,403May Stock
4,800Inaasahan 7/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 2,992May Stock
2,400Inaasahan 8/27/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 6,712May Stock
9,000Inaasahan 8/27/2026
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms - 20 V, 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 76A 23.2mOhm 100nC Qg 1,431May Stock
8,000Inaasahan 6/29/2026
Min.: 1
Mult.: 1
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms - 20 V, 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 250V 45A 48mOhm 72nC Qg 3,023May Stock
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4227PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 1,324May Stock
5,000Inaasahan 7/23/2026
Min.: 1
Mult.: 1

Si Tube
Infineon Technologies IRFP4227PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 531May Stock
400Inaasahan 6/29/2026
Min.: 1
Mult.: 1

Si Tube
Infineon Technologies IRFP4229PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V 178May Stock
400Inaasahan 12/17/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 44 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 310 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 400May Stock
1,600Inaasahan 7/2/2026
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 199May Stock
25,600Inoorder
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 9.5A 300mOhm 23.3nC 1,740May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms - 20 V, 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies IRFB4620PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V Lead-Time para sa Hindi Naka-stock 19 (na) Linggo
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 25 A 72.5 mOhms - 20 V, 20 V 5 V 25 nC - 55 C + 175 C 144 W Enhancement Tube