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MSC50DC120HJ

Name: Microchip MSC50DC120HJ
Brand: Microchip Technology
SKU: 494-MSC50DC120HJ
Price: 3962.56 PHP
Availability: OutOfStock

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Mouser #:

494-MSC50DC120HJ

Mfr. #:

MSC50DC120HJ

Mfr.:

Microchip Technology

Paglalarawan:

Diode Modules PM-DIODE-SIC-SBD-SOT227

Tingnan sa Development Tools Selector

Datasheet:

MSC50DC120HJ Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Hindi Naka-stock

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Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱3,962.56	₱3,962.56

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Microchip
Kategorya ng Produkto:	Mga Diode Module
RoHS:
Isitilo ng Mounting:	Screw Mount
Package / Case:	SOT-227-4
Vr - Reverse Voltage:	1.2 kV
Kumpigurasyon:	Full Bridge
Vf - Forward Voltage:	1.5 V
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	Microchip Technology
Produkto:	SiC Schottky Diode Modules
Uri ng Produkto:	Diode Modules
Dami ng Pack ng Pabrika:	1
Subcategory:	Discrete and Power Modules
Teknolohiya:	SiC

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Datasheet

MSC50DC120HJ Datasheet (PDF)

DTS

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PCN

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USHTS:: 8541590080
ECCN:: EAR99

Silicon Carbide (SiC) Power Modules

Microchip Technology Silicon Carbide (SiC) Power Modules combine a formidable array of technologies into a single package optimized for reliability, efficiency, space-saving, and reduced assembly time. The readily available standard module product line from Microchip Technology spans a wide selection of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM®).

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.