Toshiba Mga MOSFET Module

Mga Resulta: 5
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Maximum na Operating Temperature
Pd - Power Dissipation
Packaging
Toshiba MOSFET Modules SiC MOSFET Module, 2200V, 250A
Datasheet
Lead-Time para sa Hindi Naka-stock 11 (na) Linggo
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 2.2 kV 250 A - 10 V, 25 V 5.5 V + 150 C 2 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1700V, 250A
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.7 kV 250 A - 10 V, 25 V 5.5 V + 150 C 1.35 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1200V, 400A
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.2 kV 400 A - 10 V, 25 V 5.6 V + 150 C 1.35 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1700V, 400A
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.7 kV 400 A - 10 V, 25 V 5.5 V + 150 C 2 kW Tray
Toshiba MOSFET Modules SiC MOSFET Module, 1200 V, 600 A
Datasheet
Hindi Naka-stock
Min.: 1
Mult.: 1

SiC Screw Mount N-Channel 1 Channel 1.2 kV 600 A - 10 V, 25 V 5.6 V + 150 C 2 kW Tray