Toshiba DTMOSIV Mga MOSFET

Mga Resulta: 112
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal Packaging
Toshiba MOSFETs Power MOSFET 49.2A 400W 650V Hindi Naka-stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms - 30 V, 30 V 2.5 V 160 nC + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5.8 A 850 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 700pF 13nC 6.5A 110W Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 795 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 4.5 V 16 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 8A 30W FET 600V 570pF 18.5nC Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7.8 A 530 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 7.8 A 550 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.3 A 430 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.3 A 460 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel