Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Mga Resulta: 51
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS Uri ng Produkto Isitilo ng Mounting Package / Case Laki ng Memory Organisasyon Uri ng Interface Minimum na Operating Temperature Maximum na Operating Temperature Packaging
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 557May Stock
Min.: 1
Mult.: 1
Max.: 200

SRAM SMD/SMT 64 Mbit 4 M x 16 Parallel - 40 C + 85 C Reel
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS 346May Stock
Min.: 1
Mult.: 1
Max.: 5

SRAM SMD/SMT TFBGA-48 8 Mbit 512 k x 16 Parallel - 40 C + 85 C

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 86May Stock
270Inaasahan 4/17/2026
Min.: 1
Mult.: 1
Max.: 136

SRAM SMD/SMT TSOP-44 8 Mbit 512 k x 16 Parallel - 40 C + 85 C
ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 130May Stock
Min.: 1
Mult.: 1
Max.: 5

SRAM SMD/SMT TFBGA-48 16 Mbit 1 M x 16 Parallel - 40 C + 85 C
ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL 240May Stock
Min.: 1
Mult.: 1
Max.: 36

SRAM SMD/SMT VFBGA-54 64 Mbit 4 M x 16 - 40 C + 85 C
ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 215May Stock
Min.: 1
Mult.: 1
Max.: 200

SRAM SMD/SMT 32 Mbit 2 M x 16 Parallel - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8
198Inaasahan 4/24/2026
Min.: 1
Mult.: 1
Max.: 66

DRAM SMD/SMT SOIC-8 64 Mbit 8 M x 8 - 40 C + 85 C
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT TFBGA-48 8 Mbit 512 k x 16 Parallel - 40 C + 85 C Reel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT BGA-54 Reel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT BGA-54 Reel
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT BGA-48 8 Mbit 512 k x 16 Parallel - 40 C + 85 C Reel
ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT TFBGA-48 16 Mbit 1 M x 16 Parallel - 40 C + 85 C Reel
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp Hindi Naka-stock
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT TFBGA-48 64 Mbit 4 M x 16 Parallel - 40 C + 85 C Reel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 480
Mult.: 480

SRAM SMD/SMT BGA-48 8 Mbit 512 k x 16 Parallel - 40 C + 85 C
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,70ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI IS66WV1M16EBLL-55BLI
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1
Mult.: 1

SRAM
ISSI IS66WV1M16EBLL-55BLI-TR
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI IS66WVE2M16TCLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI IS66WVE2M16TCLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 480
Mult.: 480

SRAM
ISSI IS66WVE2M16ECLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI IS66WVE4M16ECLL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM Reel
ISSI IS66WVE4M16EALL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

SRAM SMD/SMT 64 Mbit 4 M x 16 Parallel - 40 C + 85 C Reel
ISSI IS66WVC2M16EALL-7010BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500
SRAM Reel
ISSI IS66WVC2M16EALL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 480
Mult.: 480

SRAM SMD/SMT 32 Mbit 2 M x 16 Parallel - 40 C + 85 C