NCP5892 Enhanced Mode GaN Power Switches

onsemi NCP5892 Enhanced Mode GaN Power Switch integrates a high-performance, high-frequency Silicon (Si) driver and 650V Gallium-Nitride (GaN) High-Electron-Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver and power GaN HEMT switch provides superior performance compared to the discrete solution GaN HEMT and external driver. The onsemi NCP5892 integrated implementation significantly reduces circuit and package parasitics while enabling a more compact design.