TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

Results: 20
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Description Datasheet Availability Pricing (PHP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
Datasheet
50In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
Datasheet
1,960In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
Datasheet
2,000In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=176W F=1MHZ
Datasheet
1,961In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ
Datasheet
1,996In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ
Datasheet
1,984In Stock
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ
Datasheet
53In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH
Datasheet
294In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH
Datasheet
187In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFETs TO247 650V 1.69A N-CH
Datasheet
85In Stock
60Expected 25/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
Datasheet
143In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH
Datasheet
750In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.4A N-CH
Datasheet
350In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFETs TO220 150V 1.1A N-CH
Datasheet
224In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFETs TO220 150V 2.2A N-CH
Datasheet
15In Stock
350Expected 28/09/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ
Datasheet
9In Stock
100Expected 25/01/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=176W F=1MHZ
Datasheet
20In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFETs Power MOSFET N-Channel
Datasheet
8In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS
Datasheet
9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFETs POWER MOSFET TRANSISTOR DFN 8x8 PD=240W F=1MHZ
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 5,000
Mult.: 5,000
: 5,000

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel